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Numéro de référence | 4AM15 | ||
Description | Silicon N-Channel/P-Channel Power MOS FET Array | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A
P Channel: RDS(on) ≤ 0.9 Ω, VGS = –10 V, ID = –2 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
www.DataSheet.in
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Pages | Pages 6 | ||
Télécharger | [ 4AM15 ] |
No | Description détaillée | Fabricant |
4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
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