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International Rectifier - RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT

Numéro de référence IRHSLNA54064
Description RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT
Fabricant International Rectifier 
Logo International Rectifier 





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IRHSLNA54064 fiche technique
PD-94401A
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSLNA57064
60V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on) QG
IRHSLNA57064 100K Rads (Si) 6.1m160nC
IRHSLNA53064 300K Rads (Si) 6.1m160nC
IRHSLNA54064 600K Rads (Si) 6.1m160nC
IRHSLNA58064 1000K Rads (Si) 7.1m160nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
n Low Conduction Losses
n Low Switching Losses
n Low Vf Schottky Rectifier
n Refer to IRHSNA57064 for Lower RDS(on)
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Schottky and Body Diode Avg. Forward Current
Schottky and Body Diode Avg. Forward Current
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
75*
75* A
300
250 W
2.0 W/°C
±20 V
370 mJ
75 A
25 mJ
75*
A
75*
-55 to 150
300 (for 5s)
°C
3.3 (Typical)
g
1
08/07/02
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