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PDF IRHNM57110 Data sheet ( Hoja de datos )
| Número de pieza | IRHNM57110 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD-97192B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
IRHNM57110
JANSR2N7503U8
100V, N-CHANNEL
REF: MIL-PRF-19500/743
5 TECHNOLOGY
Part Number
IRHNM57110
IRHNM53110
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.22Ω
0.22Ω
ID
6.9A
6.9A
QPL Part Number
JANSR2N7503U8
JANSF2N7503U8
Refer to Page 10 for 1 Additional Part Number -
IRHNMC57110 (Ceramic Lid)
SMD-0.2
(METAL LID)
International Rectifier’s R5TM technology provides high
performance power MOSFETs for space applications. These
devices have been characterized for Single Event Effects
(SEE) with useful performance up to an LET of 80 (MeV/
(mg/cm2)). The combination of low RDS(on) and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n Complimentary P-Channel Available -
IRHNM597110, IRHNMC597110
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
6.9
4.4
27.6
23
0.18
±20
24
6.9
2.3
11.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.25 (Typical)
g
1
09/03/10
www.DataSheet.in
1 page  
Pre-Irradiation
IRHNM57110, JANSR2N7503U8
1.6
1.4 ID = 6.9A
1.2
1.0
0.8
0.6 TJ = 150°C
0.4
0.2
TJ = 25°C
0
4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
0.8
TJ = 150°C
0.6
0.4
TJ = 25°C
0.2
Vgs = 12V
0
0 2 4 6 8 10 12 14 16
ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
140
ID = 1.0mA
130
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
4
3
2
ID = 50µA
ID = 250µA
1 ID = 1.0mA
ID = 150mA
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
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| PDF Descargar | [ Datasheet IRHNM57110.PDF ] | |
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