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PDF IRHLYS797034CM Data sheet ( Hoja de datos )
| Número de pieza | IRHLYS797034CM | |
| Descripción | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97292A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
Radiation Level
IRHLYS797034CM 100K Rads (Si)
IRHLYS793034CM 300K Rads (Si)
RDS(on)
0.074Ω
0.074Ω
ID
-20A*
-20A*
2N7625T3
IRHLYS797034CM
60V, P-CHANNEL
TECHNOLOGY
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while
maintaining single event gate rupture and single
event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Absolute Maximum Ratings
Parameter
ID@VGS = -4.5V, TC = 25°C Continuous Drain Current
ID@VGS = -4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Low-Ohmic
TO-257AA
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary N-Channel Available -
IRHLYS77034CM
Pre-Irradiation
Units
-20*
-16.6
-80
A
75 W
0.6 W/°C
±10 V
181 mJ
-20 A
7.5 mJ
10.9
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/05/10
www.DataSheet.in
1 page  
Pre-Irradiation
IRHLYS797034CM, 2N7625T3
160
140 ID = -20A
120
100
80 TJ = 150°C
60
40
20 TJ = 25°C
0
2 4 6 8 10 12
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
140
130
120
110
100
90
80
70
60
50
40
30
0
TJ = 150°C
TJ = 25°C
Vgs = -4.5V
10 20 30 40 50 60 70 80
-ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
75
ID = -1.0mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
2.0
1.5
1.0
ID = -50µA
0.5 ID = -250µA
ID = -1.0mA
ID = -150mA
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
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