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PDF IRGI4090PBF Data sheet ( Hoja de datos )
| Número de pieza | IRGI4090PBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 97318A
IRGI4090PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
300
VCE(ON) typ. @ IC = 11A
1.20
IRP max @ TC= 25°C
140
TJ max
150
C
V
V
A
°C
G
E
n-channel
G
Gate
C
Collector
CE
G
TO-220AB
Full-Pak
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case d
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Max.
±30
21
11
140
34
14
0.27
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
Max.
3.65
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
06/13/08
1 page  
IRGI4090PbF
10000
1000
VGS = 0V, f = 1 MHZ
Cies = Cge + Cgd, Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
100
Coes
Cres
10
0
50 100 150
VCE, Collector-toEmitter-Voltage(V)
200
16
IC = 11A
14
12 VCES= 240V
VCES= 150V
10 VCES= 60V
8
6
4
2
0
0 10 20 30
Q G, Total Gate Charge (nC)
40
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.24132
0.68173
τi (sec)
0.000104
0.001551
τ4τ4 1.10405 0.071769
1.62289 1.9251
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRGI4090PBF.PDF ] | |
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