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IRGI4085PBF fiches techniques PDF

International Rectifier - PDP TRENCH IGBT

Numéro de référence IRGI4085PBF
Description PDP TRENCH IGBT
Fabricant International Rectifier 
Logo International Rectifier 





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IRGI4085PBF fiche technique
PDP TRENCH IGBT
PD - 97285
IRGI4085PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 28A
IRP max @ TC= 25°C
TJ max
330
1.21
210
150
C
V
V
A
°C
G
CE
G
E
n-channel
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case d
Max.
±30
28
15
210
38
15
0.30
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
Max.
3.29
Units
V
A
W
W/°C
°C
N
Units
°C/W
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1
05/30/07

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