|
|
PDF IRG4PC50SDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4PC50SDPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRG4PC50SDPBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
PD - 97316
IRG4PC50SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Standard Speed CoPack IGBT
Features
Standard: Optimized for minimum saturation voltage
and low operating frequencies (<1kHz)
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standard TO-247AC package
Benefits
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.28V
@VGE = 15V, IC = 41A
C
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current
dClamped Inductive Load Current
Diode Continous Forward Current
eDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
www.DataSheet.in
Max.
600
70
41
140
140
25
280
±20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.64
0.83
–––
40
Units
°C/W
www.irf.com
04/16/08
1 page  
IRG4PC50SDPbF
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
www.DataSheet.in
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PC50SDPBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRG4PC50SDPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |