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IRF7756GPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7756GPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7756GPBF fiche technique
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
PD- 96153A
IRF7756GPbF
VDSS
-12V
HEXFET® Power MOSFET
RDS(on) max
0.040@VGS = -4.5V
0.058@VGS = -2.5V
0.087@VGS = -1.8V
ID
-4.3A
-3.4A
-2.2A
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TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-4.3
-3.5
-17
1.0
0.64
8.0
±8.0
-55 to +150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambientƒ
Max.
125
Units
°C/W
1
05/14/09
www.DataSheet.in

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