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PDF IRF7754GPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7754GPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the ruggedized device design, that International Rectifier
is well known for, provides thedesigner with an extremely
efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the
standard SO-8. This makes the TSSOP-8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.2mm) allows it to fit easily into extremely
thin environments such as portable electronics and PCMCIA
cards.
PD- 96152A
IRF7754GPbF
HEXFET® Power MOSFET
VDSS
-12V
RDS(on) max
25mΩ@VGS = -4.5V
34mΩ@VGS = -2.5V
49mΩ@VGS = -1.8V
ID
-5.4A
-4.6A
-3.9A
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TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-5.5
-4.4
-22
1
0.64
0.01
±8
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
125
Units
°C/W
1
05/14/09
www.DataSheet.in
1 page  
IRF7754GPbF
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10 0.05
0.02
0.01
1
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.1 1 10
t1 , Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
1000
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7754GPBF.PDF ] | |
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