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PDF IRF7342QPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7342QPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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O Advanced Process Technology
O Ultra Low On-Resistance
O Dual P Channel MOSFET
O Surface Mount
O Available in Tape & Reel
O 150°C Operating Temperature
O Automotive [Q101] Qualified
O Lead-Free
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
PD - 96109
IRF7342QPbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = -55V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.105Ω
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
1
07/23/07
www.DataSheet.in
1 page  
1200
960
720
VCGissS
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds
SHORTED
CCrossss
=
=
CCgdds
+
Cgd
Ciss
480
240
0
1
Coss
Crss
10 100
--VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
IRF7342QPbF
20 ID = -3.1A
16
VVDDSS
=
=
-48V
-30V
VDS =-12V
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7342QPBF.PDF ] | |
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