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PDF IRF7324 Data sheet ( Hoja de datos )
| Número de pieza | IRF7324 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7324 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD -93799A
q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Low Profile (<1.1mm)
q Available in Tape & Reel
q 2.5V Rated
S1
G1
S2
G2
Description
New trench HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
IRF7324
HEXFET® Power MOSFET
1
2
8 D1
7 D1
VDSS = -20V
3 6 D2
4 5 D 2 RDS(on) = 0.018Ω
To p V iew
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-9.0
-7.1
-71
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient
www.irf.com
Units
62.5
°C/W
1
6/26/00
www.DataSheet.in
1 page  
IRF7324
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
10
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7324.PDF ] | |
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