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PDF KTC9018S Data sheet ( Hoja de datos )
| Número de pieza | KTC9018S | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: Cre=0.65pF(Typ.).
Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
High Transition Frequency : fT=800MHz(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC *
Tj
40
30
4
20
-20
350
150
Storage Temperature Range
Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
KTC9018S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
hFE Rank
BGType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=40V, IE=0
Emitter Cut-off Current
IEBO VEB=4V, IC=0
DC Current Gain
hFE (Note) VCE=5V, IC=1mA
Reverse Transfer Capacitance
Cre VCE=6V, f=1MHz, IE=0
Transition Frequency
fT VCE=10V, IC=8mA, f=100MHz
Collector-Base Time Constant
CC rbb' VCE=6V, IE=-1mA, f=30MHz
Noise Figure
Power Gain
NF
Gpe VCE=6V, IE=-1mA, f=100MHz
Note : hFE Classification F:54 80, G:72 108, H:97 146, I:130 198
MIN.
-
-
54
-
500
-
-
15
TYP.
-
-
-
-
800
-
-
-
MAX.
0.1
0.1
198
1.0
-
30
4.0
-
UNIT
A
A
pF
MHz
pS
dB
2003. 3. 25
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