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Renesas Technology - Silicon N Channel IGBT High Speed Power Switching

Numéro de référence RJH60F6DPK
Description Silicon N Channel IGBT High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJH60F6DPK fiche technique
Preliminary Datasheet
RJH60F6DPK
Silicon N Channel IGBT
High Speed Power Switching
REJ03G1940-0100
Rev.1.00
Jun 18, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
1
23
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
85
45
170
100
297.6
0.42
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1940-0100 Rev.1.00
Jun 18, 2010
www.DataSheet.in
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