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PDF RJE0601JPE Data sheet ( Hoja de datos )
| Número de pieza | RJE0601JPE | |
| Descripción | Silicon P Channel MOS FET Series Power Switching | |
| Fabricantes | Renesas Technology | |
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RJE0601JPE
Silicon P Channel MOS FET Series
Power Switching
Preliminary Datasheet
REJ03G1906-0200
Rev.2.00
Jun 29, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance RDS: 22 m Typ, 27 m Max (VGS = –10 V)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
123
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Symbol
VDSS
VGSS
VGSS
ID
IDR
IAP Note 1
EAR Note 2
Pch Note 1
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–40 Note 3
–40
–15
964
50
150
–55 to +150
1. Gate
2. Drain
(Flange)
3. Source
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
www.DataSheet.in
Page 1 of 6
1 page  
RJE0601JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−12
−10
−8
−6
VDD = −16 V
−4
−2
0
0.0001
0.001
0.01
0.1
Shutdown Time of Load-Short Test Pw (S)
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 ID = −5 A
dv/dt
VGS ≥ 500 V/ms
100
0 −2 −4 −6 −8 −10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.02
0.01
1shot pulse
0.05
0.01
0.00001
0.0001
0.001
θch - c(t) = γs (t) x θch - c
θch - c = 2.5°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
0.01
0.1
1 10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
RL
Vin 50 Ω
–10 V
VDD
= –30 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
www.DataSheet.in
Page 5 of 6
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