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PDF BCR8LM-12LB Data sheet ( Hoja de datos )
| Número de pieza | BCR8LM-12LB | |
| Descripción | Triac | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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BCR8LM-12LB
Triac
Medium Power Use
Features
IT (RMS) : 8 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA
Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0058EJ0100
Rev.1.00
Jul 27, 2010
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized : File No. E223904
1
23
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing
machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric
heater control, and other general purpose control applications
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Ratings
8
80
26
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A2s
W
W
V
A
C
C
g
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 107C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
R07DS0058EJ0100 Rev.1.00
Jul 27, 2010
www.DataSheet.in
Page 1 of 7
1 page  
BCR8LM-12LB
Holding Current vs.
Junction Temperature
103
7 Typical Example
5
4
3
2
102
7
5
4
3
2
101
–60–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
Typical Example
140 Tj = 150°C
120
100
80
60
40 III Quadrant
20
I Quadrant
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
Preliminary
Latching Current vs.
Junction Temperature
103
7
5
3
2
Distribution T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
100
TT22+–,,
G+
G–
Typical Example
–40 0 40 80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140 Tj = 125°C
120
100
80
60 III Quadrant
40
20 I Quadrant
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj = 125°C)
7
5 Main Voltage
(dv/dt)c
3
Main Current
IT
2τ
101
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
7
5
Minimum
Characteristics
Value
3
I Quadrant
2
100
7100
III Quadrant
2 3 5 7 101
2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0058EJ0100 Rev.1.00
Jul 27, 2010
www.DataSheet.in
Page 5 of 7
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| PDF Descargar | [ Datasheet BCR8LM-12LB.PDF ] | |
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