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PDF IRF7855PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7855PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97173
IRF7855PbF
Applications
l Primary Side Switch in Bridge Topology
in Universal Input (36-75Vin) Isolated
DC-DC Converters
l Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
l Secondary Side Synchronous
Rectification Switch for 15Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
VDSS
60V
HEXFET® Power MOSFET
RDS(on) max
ID
9.4m:@VGS = 10V 12A
S1
S2
S3
AA
8D
7D
6D
Benefits
G
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
45
Top View
D
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
eMaximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
eiRθJA Junction-to-Ambient (PCB Mount)
Max.
60
± 20
12
8.7
97
2.5
0.02
9.9
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 8
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1
01/05/06
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1 page  
IRF7855PbF
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
150
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W)
τAτA 6.734
τ3τ3 27.268
τi (sec)
0.027848
1.3813
16.003 53
0.0001
1E-006 1E-005 0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1000
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7855PBF.PDF ] | |
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