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Número de pieza | IPUH6N03LB | |
Descripción | OptiMOS2 Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPUH6N03LB (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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OptiMOS®2 Power-Transistor
Package
Marking
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPUH6N03LB IPSH6N03LB
Product Summary
V DS
R DS(on),max
ID
30 V
6.3 mΩ
50 A
Type
IPUH6N03LB
IPSH6N03LB
Package
Marking
PG-TO251-3
H6N03LB
PG-TO251-3-11
H6N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
I D,pulse
E AS
dv /dt
V GS
P tot
T j, T stg
T C=25 °C2)
T C=100 °C
T C=25 °C3)
I D=50 A, R GS=25 Ω
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
T C=25 °C
1) J-STD20 and JESD22
Rev. 0.3
page 1
www.DataSheet.in
Value
50
50
200
160
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-15
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
10 V 4.5 V
90
80
70
4.1 V
3.8 V
IPUH6N03LB IPSH6N03LB
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
3.2 V
20
3V
3.5 V
3.8 V
4.1 V
60 15
50
40
30
20
10
0
0
3.5 V
12
V DS [V]
3.2 V
3V
2.8 V
3
10
4.5 V
5 10 V
0
0 20 40 60 80 100
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
90
80
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
100
70
80
60
50 60
40
40
30
20
175 °C
10 25 °C
20
0
012345
V GS [V]
0
0 20 40 60 80
I D [A]
Rev. 0.3
page 5
2006-05-15
www.DataSheet.in
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IPUH6N03LB.PDF ] |
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