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PDF HMC907LP5E Data sheet ( Hoja de datos )
| Número de pieza | HMC907LP5E | |
| Descripción | 1/2 Watt Power Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0510
Typical Applications
The HMC907LP5E is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
9 • Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC907LP5E
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Features
High P1dB Output Power: +26 dBm
High Gain: 12 dB
High Output IP3: +36 dBm
Single Supply: +10 V @ 350 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm²
General Description
The HMC907LP5E is a GaAs MMIC pHEMT Distributed
Power Amplifier which operates between 0.2 and
22 GHz. This self-biased power amplifier provides
12 dB of gain, +36 dBm output IP3 and +26 dBm of
output power at 1 dB gain compression while requir-
ing only 350 mA from a +10 V supply. Gain flatness is
excellent at ±0.7 dB from 0.2 to 22 GHz making the
HMC907LP5E ideal for EW, ECM, Radar and test
equipment applications. The HMC907LP5E amplifier
I/Os are internally matched to 50 Ohms facilitating
integration into Mutli-Chip-Modules (MCMs) and is
packaged in a leadless QFN 5x5 mm surface mount
package, and requires no external matching compo-
nents.
Electrical Specifications, TA = +25 °C, Vdd = +10 V, Idd = 350 mA
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 10V)
Min. Typ. Max.
0.2 - 10
10 12
±0.7
0.01
15
13
23 26
28.5
36
3.5
350 400
Min. Typ. Max.
10 - 18
10 11.5
±0.6
0.013
9
12
21 25
27
34
3.5
350 400
Min.
10
19.5
Typ.
18 - 22
11.5
±0.7
0.014
8
8
21.5
24.5
31
4
350
Max.
400
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
v00.0510
9
Power Compression @ 10 GHz
32
28 Pout
Gain
24 PAE
20
16
12
8
4
0
0 3 6 9 12 15
INPUT POWER (dBm)
18
21
Power Dissipation
6
5
4
3
2 GHz
2
10 GHz
20 GHz
Max Pdiss @ 85C
1
0
0 4 8 12 16
INPUT POWER (dBm)
20
HMC907LP5E
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Gain & Power Supply
vs. Supply Current @ 10 GHz
35
30
25
20
Gain (dB)
P1dB (dBm)
Psat (dBm)
15
10
8
9 10
Vdd (V)
11
Second Harmonics vs.
Temperature @ Pout = 16 dBm, Vdd = 10V
70
60 +25C
+85C
50 -40C
40
30
20
10
0
0 4 8 12 16 20 24
FREQUENCY(GHz)
Second Harmonics vs. Vdd @ Pout = 16 dBm
70
60 +8V
+9V
50
+10V
+11V
40
30
20
10
0
0 4 8 12 16 20 24
FREQUENCY(GHz)
Second Harmonics vs. Pout @ Vdd = 10V
70
60
+8 dBm
+10 dBm
+12 dBm
+14 dBm
50 +16 dBm
+18 dBm
40
30
20
10
0
0 4 8 12 16 20 24
FREQUENCY(GHz)
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC907LP5E.PDF ] | |
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