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PDF HMC907 Data sheet ( Hoja de datos )
| Número de pieza | HMC907 | |
| Descripción | 1/2 Watt Power Amplifier Chip | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC907 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v00.0310
Typical Applications
The HMC907 is ideal for:
• Test Instrumentation
3 • Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC907
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Features
High P1dB Output Power: +27 dBm
High Gain: 14 dB
High Output IP3: +38 dBm
Single Supply: +10V @ 350 mA
50 Ohm Matched Input/Output
Die Size: 2.91 x 1.33 x 0.1 mm
General Description
The HMC907 is a GaAs MMIC pHEMT Distributed
Power Amplifier die which operates between 0.2 and
22 GHz. This self-biased power amplifier provides
14 dB of gain, 38 dBm output IP3 and +27 dBm of
output power at 1 dB gain compression while requir-
ing only 350mA from a +10V supply. Gain flatness is
excellent at ±0.6 dB from DC to 12 GHz making the
HMC907 ideal for EW, ECM, Radar and test equip-
ment applications. The HMC907 amplifier I/Os are
internally matched to 50 Ohms facilitating integration
into Mutli-Chip-Modules (MCMs). All data is taken
with the chip connected via two 0.025mm (1 mil) wire
bonds of minimal 0.31 mm (12 mils) length.
Electrical Specifications, TA = +25 °C, Vdd = +10V, Idd = 350mA
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 10V)
Min. Typ. Max.
0.2 - 8
12 13.5
±0.6
0.008
15
15
23 26
28.5
37
3.5
350
Min. Typ. Max.
8 - 16
12 13.5
±0.5
0.008
15
20
25 27
29.5
38
2.5
350
Min.
12.5
23
Typ.
16 - 22
14
±0.3
0.009
15
15
25.5
28.5
37
3.0
350
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
v00.0310
3
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +11V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 63 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+11 Vdc
+20 dBm
150 °C
4.1 W
15.8 °C/W
-65 to 150°C
-55 to 85 °C
HMC907
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+9
+10
+11
Idd (mA)
350
350
350
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
Die Packaging Information [1]
Standard
Alternate
WP-9 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC907.PDF ] | |
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