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PDF HMC797 Data sheet ( Hoja de datos )
| Número de pieza | HMC797 | |
| Descripción | 1 Watt Power Amplifier Chip | |
| Fabricantes | Hittite Microwave Corporation | |
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Typical Applications
The HMC797 is ideal for:
• Test Instrumentation
3 • Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
v01.0710
HMC797
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Features
High P1dB Output Power: +28 dBm
High Psat Output Power: +31 dBm
High Gain: 14.5 dB
High Output IP3: +40 dBm
Supply Voltage: +10 V @ 400 mA
50 Ohm Matched Input/Output
Die Size: 2.89 x 1.55 x 0.1 mm
General Description
The HMC797 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 22 GHz. The amplifier provides 14.5 dB of gain,
40 dBm output IP3 and +28 dBm of output power at
1 dB gain compression while requiring 400mA from
a +10V supply. This versatile PA exhibits a positive
gain slope from DC to 22 GHz making it ideal for
EW, ECM, Radar and test equipment applications.
The HMC797 amplifier I/Os are internally matched
to 50 Ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
3-1
Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA*
Parameter
Min. Typ. Max.
Frequency Range
DC - 10
Gain
13.5
Gain Flatness
±0.5
Gain Variation Over Temperature
0.009
Input Return Loss
16
Output Return Loss
16
Output Power for 1 dB Compression (P1dB) 27 28.5
Saturated Output Power (Psat)
31
Output Third Order Intercept (IP3)
41
Noise Figure
3.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
* Adjust Vgg1 between -2 to 0V to achieve Idd = 400mA typical.
Min. Typ. Max.
10 - 18
14.5
±0.7
0.01
17
18
27 28.5
31
40
3
400
Min.
26.5
Typ.
18 - 22
15.5
±0.4
0.012
18
17
28
31
39
3.5
400
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
v01.0710
HMC797
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Second Harmonics vs.
Idd @ Pout = 18 dBm
70
60
3 50
40
300mA
350mA
400mA
30
20
10
0
0 4 8 12 16 20 24
FREQUENCY(GHz)
Second Harmonics vs. Pout
70
+12 dBm
60
+14 dBm
+16 dBm
+18 dBm
50
+20 dBm
+22 dBm
+24 dBm
40
30
20
10
0
0 4 8 12 16 20 24
FREQUENCY(GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+12 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
Vgg2 = (Vdd -6.5V) to 4.5V. For
Vdd <8.5V, Vgg2 must remain >2V
RF Input Power (RFIN)
+23 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C)
4.5 W
Thermal Resistance
(channel to die bottom)
14.5 °C/W
Output Power into VSWR >7:1 29 dBm
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+9
+10
+11
Idd (mA)
400
400
400
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC797.PDF ] | |
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