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2SA2219 fiches techniques PDF

Toshiba Semiconductor - Transistor Silicon PNP Epitaxial Type

Numéro de référence 2SA2219
Description Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SA2219 fiche technique
DataSheet.in
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2219
2SA2219
Audio Frequency Amplifier Applications
High collector voltage
: VCEO = 160 V (min)
Small collector output capacitance : Cob = 17pF (typ.)
High transition frequency
: fT = 100MHz (typ.)
Complementary to 2SC6139
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
DC
Pulse
VCBO
VCEO
VEBO
IC
ICP
IB
Pc
-160
-160
-6
-1.5
-2.5
-0.5
1
V
V
V
A
A
A
W
Junction temperature
Storage temperature range
Tj 150 °C
Tstg -55 to 150 °C
JEDEC
JEITA
Note 1: Ensure that the channel temperature does not exceed 150°C
TOSHIBA
2-7D101A
during use of the device.
Weight : 0.2 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-09-28

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