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PDF NDP08N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDP08N60Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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DataSheet.in
NDF08N60Z, NDP08N60Z
N-Channel Power MOSFET
600 V, 0.95 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF08N60Z NDP08N60Z Unit
Drain−to−Source Voltage
Continuous Drain Current
RqJC
Continuous Drain Current
RqJC TA = 100°C
Pulsed Drain Current,
VGS @ 10 V
Power Dissipation
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, ID = 7.5 A
ESD (HBM)
(JESD 22−A114)
VDSS
ID
600
7.5 (Note 1)
7.5
ID 4.8 (Note 1)
4.8
IDM 30 (Note 1)
30
PD 35
139
VGS
30
EAS 235
Vesd
4000
V
A
A
A
W
V
mJ
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VISO
dv/dt
4500
4.5
V
V/ns
Continuous Source
Current (Body Diode)
IS
7.5 A
Maximum Temperature for
Soldering Leads
TL
260 °C
Operating Junction and
TJ, Tstg
Storage Temperature Range
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ID v 7.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
http://onsemi.com
VDSS
600 V
RDS(ON) (MAX) @ 3.5 A
0.95 W
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220
CASE 221A
STYLE 5
NDF08N60ZG
or
NDP08N60ZG
AYWW
Gate
Source
Drain
A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 0
1
Publication Order Number:
NDF08N60Z/D
1 page  
DataSheet.in
NDF08N60Z, NDP08N60Z
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1
1 ms
10 ms
100 ms
10 ms
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF08N60Z
1000
10
DUTY CYCLE = 0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
1E−06
0.01
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N60Z
RqJC = 3.6°C/W
Steady State
1E+02 1E+03
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Order Number
NDF08N60ZG
NDP08N60ZG
Package
TO−220FP
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
(In Development)
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDP08N60Z.PDF ] | |
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