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Numéro de référence | PBSS4032PD | ||
Description | 2.7A PNP low VCEsat (BISS) transistor | ||
Fabricant | NXP Semiconductors | ||
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1 Page
DataSheet.in
PBSS4032PD
30 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032ND.
1.2 Features
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = −3 A;
IB = −300 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - −30 V
- - −2.7 A
- - −5 A
[1] -
88 130 mΩ
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Pages | Pages 14 | ||
Télécharger | [ PBSS4032PD ] |
No | Description détaillée | Fabricant |
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