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PBSS4032PD fiches techniques PDF

NXP Semiconductors - 2.7A PNP low VCEsat (BISS) transistor

Numéro de référence PBSS4032PD
Description 2.7A PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS4032PD fiche technique
DataSheet.in
PBSS4032PD
30 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032ND.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ Optimized switching time
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ AEC-Q101 qualified
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ Battery-driven devices
„ Power management
„ Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp 1 ms
IC = 3 A;
IB = 300 mA
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 2.7 A
- - 5 A
[1] -
88 130 mΩ

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