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PDF PBSS4041SP Data sheet ( Hoja de datos )
| Número de pieza | PBSS4041SP | |
| Descripción | 5.9A PNP/PNP Low V_CEsat (BISS) Transistor | |
| Fabricantes | NXP Semiconductors | |
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DataSheet.in
PBSS4041SP
60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4041SP SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4041SN
NPN/PNP
complement
PBSS4041SPN
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −4 A;
IB = −0.4 A
Min Typ Max
- - −60
- - −5.9
- - −15
[1] -
47 70
Unit
V
A
A
mΩ
1 page  
DataSheet.in
NXP Semiconductors
PBSS4041SP
60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aac336
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
102
Zth(j-a)
(K/W)
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0
0.01
006aac337
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 4.
Ceramic PCB, Al2O3, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4041SP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
DataSheet.in
NXP Semiconductors
11. Soldering
PBSS4041SP
60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor
5.50
0.60 (8×)
1.30
4.00 6.60 7.00
1.27 (6×)
solder lands
occupied area
placement accuracy ± 0.25
Dimensions in mm
Fig 16. Reflow soldering footprint SOT96-1 (SO8)
0.60 (6×)
1.20 (2×)
0.3 (2×)
enlarged solder land
1.30
4.00 6.60 7.00
sot096-1_fr
1.27 (6×)
5.50
board direction
solder lands
occupied area
solder resist
placement accurracy ± 0.25
Dimensions in mm
Fig 17. Wave soldering footprint SOT96-1 (SO8)
sot096-1_fw
PBSS4041SP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
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