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PDF PBSS4032SN Data sheet ( Hoja de datos )
| Número de pieza | PBSS4032SN | |
| Descripción | 5.7A NPN/NPN Low V_CEsat (BISS) Transistor | |
| Fabricantes | NXP Semiconductors | |
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DataSheet.in
PBSS4032SN
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4032SN SOT96-1
Name
SO8
PNP/PNP
complement
PBSS4032SP
NPN/PNP
complement
PBSS4032SPN
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
open base
single pulse;
tp ≤ 1 ms
IC = 4 A; IB = 0.4 A
-
-
-
[1] -
- 30
- 5.7
- 10
45 62.5
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Unit
V
A
A
mΩ
1 page  
DataSheet.in
NXP Semiconductors
PBSS4032SN
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.33
0.1
0.5
0.2
0.05
0.02
0.01
0
006aac280
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
1
0
0.01
006aac281
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 4.
Ceramic PCB, Al2O3, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4032SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
DataSheet.in
NXP Semiconductors
11. Soldering
PBSS4032SN
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
5.50
0.60 (8×)
1.30
4.00 6.60 7.00
1.27 (6×)
solder lands
occupied area
placement accuracy ± 0.25
Dimensions in mm
Fig 16. Reflow soldering footprint SOT96-1 (SO8)
0.60 (6×)
1.20 (2×)
0.3 (2×)
enlarged solder land
1.30
4.00 6.60 7.00
sot096-1_fr
1.27 (6×)
5.50
board direction
solder lands
occupied area
solder resist
placement accurracy ± 0.25
Dimensions in mm
Fig 17. Wave soldering footprint SOT96-1 (SO8)
sot096-1_fw
PBSS4032SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
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