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Numéro de référence | ULM850-10-TN-N0101U | ||
Description | 10 Gbps VCSEL | ||
Fabricant | ULM | ||
Logo | |||
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10 Gbps VCSEL 850 nm
1x1, 1x4/12 chip
Vertical Cavity Surface-Emitting Laser
High speed up to 10 Gbps
Unsealed 85% r.H./85°C certified
1x1, 1x4, 1x12 chips
INVISIBLE LASER RADIATION
AVOID BEAM EXPOSURE
CLASS 3B LASER PRODUCT
ELECTRO-OPTICAL CHARACTERISTICS (chip)
PRELIMINARY
PARAMETER
SYMBOL UNITS MIN TYP MAX TEST CONDITIONS
Emission wavelength
λR nm 840 850 860 Iop=6mA; T=0..70°C
Threshold current
Ith mA
1.0 T=0..70°C
Threshold voltage
Uth
V 1.5
1.8 T=0..70°C
Slope Efficiency
ηs W/A 0.3 0.4 0.5 T=20°C
Variation of ηs over temp.
∆ηs(T)
W/A
0.12 T=0..70°C
Optical output power
Popt mW 1.0
2.5 Iop=6mA; T=0..70°C
Variation of Popt over temp.
∆Popt(T) mW
0.8 Iop=6mA; T=0..70°C
Laser voltage
Uop V
2.0 Iop=6mA; T=20°C
Differential series resistance RS
Ω 50 70 90 Iop=6mA; T=20°C
3dB modulation bandwidth
ν3dB
GHz 8
Iop=6mA; T=20°C
Rise and fall time
tR/tF 20/80
ps
30/45 55 Iop=6mA; ER=8dB; T=20°C
Relative intensity noise
RIN dB/Hz
-130 -120 Iop=6mA; 0.1..10GHz; T=20°C
Wavelength tuning over current
nm/mA
0.3
Wavelength tuning over temp.
nm/K
0.07
Thermal resistance
Beam divergence
Spectral bandwidth
RThermal
θ
∆λ
K/mW
°
nm
20
1.8 2.5 T=20°C
30 I op=6mA; full-width 1/e^2; T=20°C
0.45 Iop=6mA; rms; T=20°C
ABSOLUTE MAXIMUM RATINGS
Storage temperature
Operating temperature
Electrical power dissipation
Continous forward current
Reverse voltage
Soldering temperature
- 40 .. 125°C
-20 .. 85°C
20 mW
8 mA
8V
330°C
www.ulm-photonics.de
NOTICE: Stresses greater than those listed under „Absolute
Maximum Ratings“ may cause permanent damage to the device.
These are stress ratings only and functional operation of the
device at these or any other condition beyond those indicated for
extended periods of time may effect device reliability.
ATTENTION: Electrostatic Sensitive Devices
Observe Precautions for Handling
v17
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Pages | Pages 2 | ||
Télécharger | [ ULM850-10-TN-N0101U ] |
No | Description détaillée | Fabricant |
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