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PDF 2SK508 Data sheet ( Hoja de datos )
| Número de pieza | 2SK508 | |
| Descripción | HIGH FREQUENCY AMPLIFIER -CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK508 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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DATA SHEET
www.DataSheet4U.com
JUNCTION FIELD EFFECT TRANSISTOR
2SK508
HIGH FREQUENCY AMPLIFIER
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
<R> DESCRIPTION
The 2SK508 is low input capacitance and High forward transfer
admittance, it is suitable for AM tuner, wireless installation and
cordless telephone.
<R> PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
<R> FEATURES
• Low input capacitance
Ciss = 4.8 pF TYP. (VDS = 5.0 V, ID = 10 mA, f = 1.0 MHz)
• High forward transfer admittance
| yfs |2 = 26 mS TYP. (VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz)
2
3
1
Marking
<R> ORDERING INFORMATION
PART NUMBER
2SK508
PACKAGE
SC-59 (Mini Mold)
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Gate to Drain Voltage
VGDO
−15
Gate to Source Voltage
VGSO
−15
Drain to Source Voltage (VGS = −4.0 V)
VDSX
15
Drain Current (DC)
ID 50
Gate Current (DC)
IG 5
Total Power Dissipation
PT 200
Junction Temperature
Tj 150
Storage Temperature
Tstg −55 to +150
V
V
V
mA
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18962EJ2V0DS00 (2nd edition)
(Previous No. TC-1651)
1985, 2007
Date Published December 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK508.PDF ] | |
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