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EDS2532EEBH-75TT fiches techniques PDF

Elpida Memory - 256M bits SDRAM WTR

Numéro de référence EDS2532EEBH-75TT
Description 256M bits SDRAM WTR
Fabricant Elpida Memory 
Logo Elpida Memory 





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EDS2532EEBH-75TT fiche technique
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256M bits SDRAM
WTR (Wide Temperature Range)
EDS2532EEBH-75TT (8M words × 32 bits)
Specifications
Density: 256M bits
Organization
2M words × 32 bits × 4 banks
Package: 90-ball FBGA
Lead-free (RoHS compliant)
Power supply: VDD, VDDQ = 1.8V ± 0.1V
Clock frequency: 133MHz (max.)
2KB page size
Row address: A0 to A11
Column address: A0 to A8
Four internal banks for concurrent operation
Interface: LVCMOS
Burst lengths (BL): 1, 2, 4, 8, full page
Burst type (BT):
Sequential (1, 2, 4, 8, full page)
Interleave (1, 2, 4, 8)
/CAS Latency (CL): 2, 3
Precharge: auto precharge operation for each burst
access
Driver strength: half/quarter
Refresh: auto-refresh, self-refresh
Refresh cycles: 4096 cycles/64ms
Average refresh period: 15.6µs
Operating ambient temperature range
TA = –20°C to +85°C
Features
• ×32 organization
Single pulsed /RAS
Burst read/write operation and burst read/single write
operation capability
Byte control by DQM
Wide temperature range
TA = –20°C to +85°C
Pin Configurations
/xxx indicates active low signal.
90-ball FBGA
123456789
A
DQ26 DQ24 VSS
B
DQ28 VDDQ VSSQ
C
VSSQ DQ27 DQ25
D
VSSQ DQ29 DQ30
E
VDDQ DQ31 NC
F
VSS DQM3 A3
G
A4 A5 A6
H
A7 A8 NC
J
CLK CKE A9
K
DQM1 NC NC
L
VDDQ DQ8 VSS
M
VSSQ DQ10 DQ9
N
VSSQ DQ12 DQ14
P
DQ11 VDDQ VSSQ
R
DQ13 DQ15 VSS
(Top view)
VDD DQ23 DQ21
VDDQ VSSQ DQ19
DQ22 DQ20 VDDQ
DQ17 DQ18 VDDQ
NC DQ16 VSSQ
A2 DQM2 VDD
A10 A0 A1
NC BA1 A11
BA0 /CS /RAS
/CAS /WE DQM0
VDD DQ7 VSSQ
DQ6 DQ5 VDDQ
DQ1 DQ3 VDDQ
VDDQ VSSQ DQ4
VDD DQ0 DQ2
A0 to A11
BA0, BA1
DQ0 to DQ31
/CS
/RAS
/CAS
/WE
DQM0 to DQM3
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC
Address inputs
Bank select address
Data-input/output
Chip select
Row address strobe
Column address strobe
Write enable
DQ mask enable
Clock enable
Clock input
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
Document No. E0910E10 (Ver. 1.0) This product became EOL in September, 2007.
Date Published May 2006 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2006

PagesPages 30
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