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PDF HC8550 Data sheet ( Hoja de datos )
| Número de pieza | HC8550 | |
| Descripción | PNP SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC | |
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Hay una vista previa y un enlace de descarga de HC8550 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
www.DataSheet4U.com
HC8550
█ PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………1W
VCBO——Collector-Base Voltage………………………………-40V
VCEO——Collector-Emitter Voltage……………………………-25V
VEBO——Emitter-Base Voltage………………………………-6V
IC——Collector Current………………………………………-1.5A
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
ICBO
IEBO
HFE
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VBE
VCE(sat）
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Base- Emitter Voltage
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Current Gain-Bandwidth Product
Min Typ Max Unit
Test Conditions
-0.1 μA VCB=-35V, IE=0
-0.1 μA VEB=-6V, IC=0
85 500
VCE=-1V, IC=-100mA
40 VCE=-1V, IC=-800mA
-1 V VCE=-1V, IC=-10mA
-0.5 V IC=-800mA, IB=-80mA
-1.2 V IC=-800mA,IB=-80mA
-40 V IC=-100μA，IE=0
-25 V IC=-2mA，IB=0
-6 V IE=-100μA，IC=0
100 MHz VCE=-10V, IC=-50mA
█ hFE Classification
B
85—160
C
120—200
D
160—300
E
270—500
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HC8550.PDF ] | |
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