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48LC8M32B2 fiches techniques PDF

Micron Technology - MT48LC8M32B2

Numéro de référence 48LC8M32B2
Description MT48LC8M32B2
Fabricant Micron Technology 
Logo Micron Technology 





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48LC8M32B2 fiche technique
SYNCHRONOUS
DRAM
PRELIMINARY
256Mb: x32www.DataSheet4U.com
SDRAM
MT48LC8M32B2 - 2 Meg x 32 x 4 banks
For the latest data sheet, please refer to the Micron Web
site: www.micron.com/sdramds
FEATURES
• PC100 functionality
• Fully synchronous; all signals registered on
positive edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes CONCURRENT AUTO
PRECHARGE, and Auto Refresh Modes
• Self Refresh Mode
• 64ms, 4,096-cycle refresh (15.6µs/row)
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
• Supports CAS latency of 1, 2, and 3
OPTIONS
• Configuration
8 Meg x 32 (2 Meg x 32 x 4 banks)
MARKING
8M32B2
• Package
86-pin TSOP (400 mil)
86-pin TSOP (400 mil) Lead-free
90-ball FBGA (8mm x 13mm)
90-ball FBGA (8mm x 13mm) Lead-free
TG
P
F51
B51
• Timing (Cycle Time)
6ns (166 MHz)
7ns (143 MHz)
• Operating Temperature Range
Commercial (0° to +70°C)
Industrial (-40°C to +85°C)
NOTE: 1. Available on -7 only
Part Number Example:
MT48LC8M32B2TG-7
-6
-7
None
IT1
KEY TIMING PARAMETERS
SPEED
CLOCK ACCESS TIME
GRADE FREQUENCY CL = 3*
-6 166 MHz 5.5ns
-7 143 MHz
6.0ns
*CL = CAS (READ) latency
SETUP
TIME
1.5ns
2ns
HOLD
TIME
1ns
1ns
Pin Assignment (Top View)
86-Pin TSOP
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDD
DQM0
WE#
CAS#
RAS#
CS#
A11
BA0
BA1
A10
A0
A1
A2
DQM2
VDD
NC
DQ16
VSSQ
DQ17
DQ18
VDDQ
DQ19
DQ20
VSSQ
DQ21
DQ22
VDDQ
DQ23
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86 VSS
85 DQ15
84 VSSQ
83 DQ14
82 DQ13
81 VDDQ
80 DQ12
79 DQ11
78 VSSQ
77 DQ10
76 DQ9
75 VDDQ
74 DQ8
73 NC
72 VSS
71 DQM1
70 NC
69 NC
68 CLK
67 CKE
66 A9
65 A8
64 A7
63 A6
62 A5
61 A4
60 A3
59 DQM3
58 VSS
57 NC
56 DQ31
55 VDDQ
54 DQ30
53 DQ29
52 VSSQ
51 DQ28
50 DQ27
49 VDDQ
48 DQ26
47 DQ25
46 VSSQ
45 DQ24
44 VSS
Note: The # symbol indicates signal is active LOW.
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
8 Meg x 32
2 Meg x 32 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
09005aef80cd8e48
256MbSDRAMx32.p65 – Rev. B; Pub. 03/04
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

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