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PDF IRGP4072DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4072DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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www.DataSheePt4DU.-co9m7317
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 150 °C
• Square RBSOA
• 100% of the parts tested for clamped inductive load
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Low EMI
C
G
E
n-channel
Applications
• Uninterruptible Power Supplies
• Battery operated vehicles
• Welding
• Solar converters and inverters
G
Gate
IRGP4072DPbF
VCES = 300V
IC = 40A, TC = 100°C
VCE(on) typ. = 1.46V
C
E
C
G
TO-247AC
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
cClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
300
70
40
120
120
70
40
120
±20
±30
180
71
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.70
0.87
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
04/16/08
1 page  
3000
2500
2000
1500
EOFF
1000
500
EON
0
0 10 20 30 40 50 60 70 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 240V, RG = 10Ω; VGE = 15V
2500
2000
EOFF
1500
1000
EON
IRGP4072DPbFwww.DataSheet4U.com
1000
tF
tdOFF
100
tR tdON
10
0
10 20 30 40 50 60 70 80
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 240V, RG = 10Ω; VGE = 15V
1000
tdOFF
tF
100 tR
tdON
500
0
25 50 75 100 125
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 240V, ICE = 40A; VGE = 15V
40
RG = 10Ω
35
RG = 22Ω
30
25 RG = 47Ω
20 RG = 100Ω
10
0
25 50 75 100 125
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 240V, ICE = 40A; VGE = 15V
40
35
30
25
15
0
20 40 60
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 150°C
80
20
0
25 50 75
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
100
www.irf.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGP4072DPBF.PDF ] | |
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