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NTMFS4851N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMFS4851N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NTMFS4851N fiche technique
NTMFS4851N
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Power MOSFET
30 V, 66 A, Single NChannel, SO8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO8 Package
These are PbFree Devices*
Applications
Refer to Application Note AND8195/D
CPU Power Delivery
DCDC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±16
15
10.8
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
PD
ID
2.16 W
24.3 A
17.5
5.67 W
9.5 A
6.9
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
0.87 W
66 A
47.8
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
41.7 W
132 A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxpkg
TJ,
TSTG
IS
dV/dt
100
55 to
+150
41.7
6
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 27 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
109 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.9 mW @ 10 V
8.7 mW @ 4.5 V
ID MAX
66 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4851N
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4851NT1G
Package
SO8FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4851NT3G SO8FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
May, 2010 Rev. 2
1
Publication Order Number:
NTMFS4851N/D

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