|
|
PDF NTMFS4847N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4847N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTMFS4847N (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NTMFS4847N
www.DataSheet4U.com
Power MOSFET
30 V, 85 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Thermally Enhanced SO−8 Package
• These are Pb−Free Device
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
TC = 25°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
30
±16
18
13
2.21
29.5
21
5.8
11.5
8.2
0.88
85
61
48.1
170
V
V
A
W
A
W
A
W
A
W
A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 33 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxpkg
TJ,
TSTG
IS
dV/dt
EAS
TL
100
−55 to
+150
48
6
163
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
4.1 mW @ 10 V
6.2 mW @ 4.5 V
ID MAX
85 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4847N
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4847NT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4847NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 1
1
Publication Order Number:
NTMFS4847N/D
1 page  
1000
100
VDS = 15 V
ID = 15 A
VGS = 11.5 V
10
NTMFS4847N
TYPICAL CHARACTERISTICS
tf
td(off)
tr
td(on)
30
VGS = 0 V
25 TJ = 25°C
20
15
10
www.DataSheet4U.com
5
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100 10 ms
10
VGS = 20 V
Single Pulse
1 TC = 25°C
RDS(on) Limit
Thermal Limit
0.1 Package Limit
0.1 1
100 ms
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
140
120
100
80
60
40
20
VDS = 1.5 V
0
0 15 30 45 60 75 90 105 120
DRAIN CURRENT (A)
Figure 13. gFS vs. Drain Current
0
0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
180
160 ID = 33 A
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
100
125°C
100°C
25°C
10
1
1
10
100
1000
10,000
PULSE WIDTH (ms)
Figure 14. Id vs. Pulse Width
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTMFS4847N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTMFS4847N | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |