DataSheetWiki


NTMFS4846N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMFS4846N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





NTMFS4846N fiche technique
NTMFS4846N
www.DataSheet4U.com
Power MOSFET
30 V, 100 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO8 Package
These are PbFree Device
Applications
Refer to Application Note AND8195/D
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
TC = 25°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
30
±16
20.3
14.6
2.25
32.8
23.7
5.90
12.7
9.2
0.89
100
72
55.5
200
V
V
A
W
A
W
A
W
A
W
A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 37 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxpkg
TJ,
TSTG
IS
dV/dt
EAS
TL
100
55 to
+150
55
6
205
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.4 mW @ 10 V
5.1 mW @ 4.5 V
ID MAX
100 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4846N
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMFS4846NT1G SO8FL
(PbFree)
1500 /
Tape & Reel
NTMFS4846NT3G SO8FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
March, 2009 Rev. 3
1
Publication Order Number:
NTMFS4846N/D

PagesPages 6
Télécharger [ NTMFS4846N ]


Fiche technique recommandé

No Description détaillée Fabricant
NTMFS4846N Power MOSFET ( Transistor ) ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche