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Eon Silicon Solution - 16 Megabit Serial Flash Memory

Numéro de référence EN25Q16
Description 16 Megabit Serial Flash Memory
Fabricant Eon Silicon Solution 
Logo Eon Silicon Solution 





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EN25Q16 fiche technique
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EN25Q16
EN25Q16
16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
16 Mbit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
Standard, Dual or Quad SPI
- Standard SPI: CLK, CS#, DI, DO, WP#
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#
- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
High performance
- 100MHz clock rate for one data bit
- 80MHz clock rate for two data bits
- 80MHz clock rate for four data bits
Low power consumption
- 12 mA typical active current
- 1 μA typical power down current
Uniform Sector Architecture:
- 512 sectors of 4-Kbyte
- 32 blocks of 64-Kbyte
- Any sector or block can be erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 400ms typical
- Chip erase time: 12 seconds typical
Lockable 128 byte OTP security sector
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
Industrial temperature Range
GENERAL DESCRIPTION
The EN25Q16 is a 16-Megabit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q16 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual/Quad output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select,
Serial DQ0(DI), DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 80MHz are
supported allowing equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output
when using the Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256
bytes at a time, using the Page Program instruction.
The EN25Q16 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25Q16 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2009/10/21
www.eonssi.com

PagesPages 30
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