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PDF N64S818HA Data sheet ( Hoja de datos )
| Número de pieza | N64S818HA | |
| Descripción | 64 kb Low Power Serial SRAMs | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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N64S818HA
64 kb Low Power Serial
SRAMs
8 k x 8 Bit Organization
Introduction
The ON Semiconductor serial SRAM family includes several
integrated memory devices including this 64 k serially accessed Static
Random Access Memory, internally organized as 8 k words by 8 bits.
The devices are designed and fabricated using ON Semiconductor’s
advanced CMOS technology to provide both high−speed performance
and low power. The devices operate with a single chip select (CS)
input and use a simple Serial Peripheral Interface (SPI) serial bus. A
single data in and data out line is used along with a clock to access data
within the devices. The N64S818HA devices include a HOLD pin that
allows communication to the device to be paused. While paused, input
transitions will be ignored. The devices can operate over a wide
temperature range of −40°C to +85°C and can be available in several
standard package offerings.
Features
• Power Supply Range: 1.7 to 1.95 V
• Very Low Standby Current: As low as 200 nA
• Very Low Operating Current: As low as 3 mA
• Simple Memory Control:
Single chip select (CS)
Serial input (SI) and serial output (SO)
• Flexible Operating Modes:
Word read and write
Page mode (32 word page)
Burst mode (full array)
• Organization: 8 k x 8 bit
• Self Timed Write Cycles
• Built−in Write Protection (CS High)
• HOLD Pin for Pausing Communication
• High Reliability: Unlimited write cycles
• Green SOIC and TSSOP
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MARKING
DIAGRAMS
TSSOP−8
T SUFFIX
CASE 948AL
A124
XXXXYZZ
SOIC−8
S SUFFIX
CASE 751BD
A114
XXXXYZZ
XXXX
Y
ZZ
= Date Code
= Assembly Code
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
N64S818HAS21I
SOIC−8 100 Units / Tube
(Pb−Free)
N64S818HAT21I
N64S818HAS21IT
TSSOP−8
(Pb−Free)
SOIC−8
(Pb−Free)
100 Units / Tube
3000 / Tape &
Reel
N64S818HAT21IT TSSOP−8
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 11
1
Publication Order Number:
N64S818HA/D
1 page  
N64S818HA
CS
SCK
tCSS
tSU
SI
MSB in
tR
tHD
SO
tF tCSH
LSB in
High−Z
Figure 3. Serial Input Timing
tCSD
tCLD
tSCS
CS
SCK
SO
SI
tLO tHI
tV
MSB out
Don’t Care
Figure 4. Serial Output Timing
tCSH
LSB out
tDIS
CS
SCK
SO n+2
SI n+2
tHS
tHH
n+1 n
tHZ
n+1 n
High−Z
Don’t Care
tHH
tHS
tHV n
n−1
tSU
n n−1
HOLD
Figure 5. Hold Timing
http://onsemi.com
5
5 Page 
N64S818HA
READ Status Register Instruction (RDSR)
This instruction provides the ability to read the Status
register. The register may be read at any time by performing
the following timing sequence. Bits 0, 6 and 7 contain the
data for the functional operation and Bit 1 will read data type
‘1’ for the 64 Kb device.
CS
SCK
SI
SO
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Instruction
00000101
Status Register Data Out
High−Z
76543210
Figure 16. READ Status Register Instruction (RDSR)
Bit 7
Bit 6
Bit 5 Bit 4 Bit 3 Bit 2 Bit 1
Bit 0
Mode
0 0 = Word Mode
1 0 = Page Mode
0 1 = Burst Mode
1 1 = Reserved
0 0 0 0 1 = 64 Kb
Figure 17. Status Register
Hold Function
0 = Hold
1 = No Hold
Power−Up State
The serial SRAM enters a know state at power−up time. The device is in low−power standby state with CS = 1. A low level
on CS is required to enter an active state.
http://onsemi.com
11
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| PDF Descargar | [ Datasheet N64S818HA.PDF ] | |
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