|
|
Número de pieza | IRLML0060TRPBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRLML0060TRPBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! www.DataSheet4U.com
PD - 97439
IRLML0060TRPbF
HEXFET® Power MOSFET
VDS 60 V
VGS Max
± 16
V
*
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
92 mΩ
116 mΩ
6
'
Micro3TM (SOT-23)
IRLML0060TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Benefits
results in
⇒
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
VGS
TJ, TSTG
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Max.
60
2.7
2.1
11
1.25
0.80
0.01
± 16
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
12/02/09
1 page www.DataSheet4U.com
IRLML0060TRPbF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
150
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRLML0060TRPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLML0060TRPBF | HEXFET Power MOSFET | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |