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What is BLS6G2731S-130?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "LDMOS S-band radar power transistor".


BLS6G2731S-130 Datasheet PDF - NXP Semiconductors

Part Number BLS6G2731S-130
Description LDMOS S-band radar power transistor
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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BLS6G2731S-130
LDMOS S-band radar power transistor
Rev. 01 — 26 July 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.7 to 3.1 32 130
12.5 47
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
‹ Output power = 130 W
‹ Power gain = 12.5 dB
‹ Efficiency = 47 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (2.7 GHz to 3.1 GHz)
„ Internally matched for ease of use
„ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
„ S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range

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BLS6G2731S-130 equivalent
NXP Semiconductors
8. Package outline
Ceramic earless flanged cavity package; 2 leads
www.DataSheet4U.com
BLS6G2731S-130
LDMOS S-band radar power transistor
SOT922-1
A
L
H U2
D
F
3
D1 D
U1 c
1
E1 E
2
b w2 M D M
Q
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
c
D D1 E E1 F H L Q U1 U2 w2
mm
4.22 12.42
3.53 12.17
0.15
0.10
17.58 17.50 9.53
17.22 17.25 9.27
9.27
9.02
1.32 15.62 3.05
0.81 14.34 2.03
1.70 17.75 9.53
1.45 17.50 9.27
0.25
inches
0.166
0.139
0.489
0.479
0.006
0.004
0.692 0.689 0.375 0.365 0.052 0.615
0.678 0.679 0.365 0.355 0.032 0.525
0.12
0.08
0.067
0.057
0.699
0.689
0.375
0.365
0.010
OUTLINE
VERSION
SOT922-1
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-11-14
05-11-22
Fig 2. Package outline SOT922-1
BLS6G2731S-130
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
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Part NumberDescriptionMFRS
BLS6G2731S-130The function is LDMOS S-band radar power transistor. NXP SemiconductorsNXP Semiconductors

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