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PDF N04L1630C2B Data sheet ( Hoja de datos )

Número de pieza N04L1630C2B
Descripción 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY
Fabricantes AMI SEMICONDUCTOR 
Logotipo AMI SEMICONDUCTOR Logotipo



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No Preview Available ! N04L1630C2B Hoja de datos, Descripción, Manual

AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N04L1630C2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAMs
256K × 16 bit POWER SAVER TECHNOLOGY TM
Overview
The N04L1630C2B is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N04L1630C2B is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
operating power while improving the performance
over standard SRAMs. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 256Kb x
16 SRAMs.
Features
• Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
1uA (Typical)
• Very low operating current
2.0mA at 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast output enable access time
30ns OE Access Time
55ns Random Access Time
30ns Page Mode Access Time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• RoHS Compliant TSOP and BGA packages
Product Family
Part Number
Package Type
Operating
Power
Speed
Temperature Supply (Vcc) Options
N04L1630C2BB2 48-BGA Green
-40oC to +85oC 2.7V - 3.6V
N04L1630C2BT2 44-TSOP II Green
55ns
70ns
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
1µA 2 mA @ 1MHz
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
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N04L1630C2B pdf
AMI Semiconductor, Inc.
Power Savings with Page Mode Operation (WE = VIH)
N04L1630C2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
Page Address (A0, A5 - A17)
Word Address (A1 - A4)
Word 1
Open page
Word 2
...
CE1
CE2
OE
LB, UB
Word 16
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A1-A4 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

5 Page





N04L1630C2B arduino
AMI Semiconductor, Inc.
N04L1630C2B
Advance wInwwfo.DramtaShaeetti4oUn.com
Ball Grid Array Package
A1 BALL PAD
CORNER (3)
D
0.28±0.05
1.24±0.10
E
1. 0.35±0.05 DIA.
K TYP
TOP VIEW
SIDE VIEW
2. SEATING PLANE - Z
0.15 Z
0.05 Z
SD
A1 BALL PAD
CORNER
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
e SPHERICAL CROWNS OF THE
SOLDER BALLS.
SE
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
J TYP
e
BOTTOM VIEW
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

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