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United Monolithic Semiconductors - 5 - 18 GHz High Power Amplifier

Numéro de référence CHA6518
Description 5 - 18 GHz High Power Amplifier
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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CHA6518 fiche technique
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CHA6518
RoHS COMPLIANT
5 – 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6518 is a monolithic three-stage
GaAs high power amplifier designed for
wide band applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
the backside of the chip is both RF and
DC grounded
bond pads and back side are gold plated
for compatibility with eutectic die attach
method and thermosonic or
thermocompression bonding process.
Main Features
n 0.25 µm Power pHEMT Technology
n 5 – 18 GHz Frequency Range
n 2W Output Power
n 24 dB nominal Gain
n Quiescent Bias point : 8V ; 1A
n Chip size: 5.23 mm x 3.26 mm x
0.07 mm
Vg Vd
Vg Vg Vd
50Input
matching
IN
Inter-
stage
Stage 1 /
Stage 2
Inter-
stage
Stage 2 /
Stage 3
Output 50
combiner
OUT
Vd
Main Characteristics
Vg Vd
Vd = 8 V
Tamb = +25°C (Tamb is the back-side of the chip)
Symbol
Parameter
F_op Operating frequency range
P_sat Saturated output power
G_lin Linear gain
Vg Vd
Min Typ Max Unit
5 18 GHz
33.5 dBm
24 dB
Ref. : DSCHA65185007 - 7 Jan 05
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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