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Numéro de référence | CHA6518 | ||
Description | 5 - 18 GHz High Power Amplifier | ||
Fabricant | United Monolithic Semiconductors | ||
Logo | |||
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CHA6518
RoHS COMPLIANT
5 – 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6518 is a monolithic three-stage
GaAs high power amplifier designed for
wide band applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold plated
for compatibility with eutectic die attach
method and thermosonic or
thermocompression bonding process.
Main Features
n 0.25 µm Power pHEMT Technology
n 5 – 18 GHz Frequency Range
n 2W Output Power
n 24 dB nominal Gain
n Quiescent Bias point : 8V ; 1A
n Chip size: 5.23 mm x 3.26 mm x
0.07 mm
Vg Vd
Vg Vg Vd
50Ω Input
matching
IN
Inter-
stage
Stage 1 /
Stage 2
Inter-
stage
Stage 2 /
Stage 3
Output 50Ω
combiner
OUT
Vd
Main Characteristics
Vg Vd
Vd = 8 V
Tamb = +25°C (Tamb is the back-side of the chip)
Symbol
Parameter
F_op Operating frequency range
P_sat Saturated output power
G_lin Linear gain
Vg Vd
Min Typ Max Unit
5 18 GHz
33.5 dBm
24 dB
Ref. : DSCHA65185007 - 7 Jan 05
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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Pages | Pages 8 | ||
Télécharger | [ CHA6518 ] |
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