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ON Semiconductor - Dual General Purpose Transistor

Numéro de référence EMT1DXV6T1
Description Dual General Purpose Transistor
Fabricant ON Semiconductor 
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EMT1DXV6T1 fiche technique
EMT1DXV6T1,
EMT1DXV6T5
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Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
Lead−Free Solder Plating
Low VCE(SAT), t0.5 V
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−60
−50
−6.0
−100
V
V
V
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD mW
357
(Note 1) mW/°C
2.9
(Note 1)
Thermal Resistance,
Junction-to-Ambient
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD mW
500
(Note 1) mW/°C
4.0
(Note 1)
Thermal Resistance,
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
6
1
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
3T M G
G
1
3T = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 1
1
Publication Order Number:
EMT1DXV6T1/D

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