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PDF HA22012 Data sheet ( Hoja de datos )

Número de pieza HA22012
Descripción Low Noise Amplifier
Fabricantes Hitachi Semiconductor 
Logotipo Hitachi Semiconductor Logotipo



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No Preview Available ! HA22012 Hoja de datos, Descripción, Manual

HA22012
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GaAs MMIC
Low Noise Amplifier for Micro Wave Application
Features
Suitable for low noise amplifier of PHS (1.9 GHz)
Low voltage and low current operation (3V, 3mA typ.)
Low noise (1.9 dB typ.)
High power gain (13.5 dB typ.)
Built–in input and output matching circuits (50)
Small surface mount package (MPAK–5)
Outline
MPAK—5
ADE-207-217 (Z)
1st. Edition
July 1996

1 page




HA22012 pdf
Pattern Layout
HA22012
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scale 4/1
:φ0.5mm
:φ0.3mm
Front Side view of PCB Pattern
RF in
Vdd
scale 4/1
: Capacitor
(100pF)
cs
RF out
Front Side view of Part Layout
ER=4.8
H=1mm
5

5 Page





HA22012 arduino
Cautions
HA22012
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1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
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