|
|
Número de pieza | PDB-C203 | |
Descripción | Blue Enhanced Quad-Cell Silicon Photodiode | |
Fabricantes | Advanced Photonix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PDB-C203 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Blue Enhanced Quad-Cell Silicon Photodiode
PDB-C203www.DataSheet4U.com
PAPCAKCAKGAGEEDDIIMMEENNSSIOIONNSSINICNHC[Hmm[m] m]
.168 [4.27]
.075 [1.91]
45°
5X Ø.018 [0.46]
1
Ø.330 [8.38]
Ø.320 [8.13]
Ø.255 [6.48]
Ø.245 [6.22]
70°
VIEWING
ANGLE
.010 [0.25] MAX
GLASS ABOVE CAP TOP EDGE
CHIP DIMENSIONS INCH [mm]
Ø.200 [5.08]
PIN CIRCLE
CHIP PERIMETER
Ø .362 [9.19]
Ø .357 [9.07]
5X .50 [12.7] MIN
ANODE CELL B 4
5
B
4A
C
D
3
2
1 ANODE CELL C
4X .050 [1.27] ACTIVE AREA
CHIP DIMENSIONS INCH [mm]
.150 [3.81]
SQUARE
CB
DA
4X .050 [1.27] ACTIVE AREA
.005 [0.13] GAP
5
CASE GROUND &
COMMON CATHODE
ANODE CELTL OA -346 PACKA2 GAENODE CELL D
SCHEMATIC
.005 [0.13] GAP
TO-5 PACKAGE
FEATURES
• Low capacitance
• Blue enhanced
• High speed
• Low dark current
DESCRIPTION
The PDB-C203 is a blue enhanced quad-cell silicon
photodiode used for nulling, centering, or measuring
small positional changes packaged in a hermetic TO-
5 metal package.
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
VBR
TSTG
TO
TS
PARAMETER
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
MIN MAX UNITS
100 V
-55 +150 °C
-40 +125 °C
+240 °C
* 1/16 inch from case for 3 seconds max.
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
APPLICATIONS
• Emitter Alignment
• Position sensing
• Medical and Industrial
SPECTRAL RESPONSE
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ISC
ID
RSH
CJ
lrange
VBR
NEP
tr
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
H = 100 fc, 2850 K
VR = 5V
VR = 10 mV
VR =10 V, f = 1 MHz
Spot Scan
I = 10 μA
VR = 0V @ l=Peak
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 10 V
MIN
30
250
350
50
TYP
50
0.5
500
8
75
8.5x10-15
190
13
MAX
1.0
1100
UNITS
µA
nA
MΩ
pF
nm
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet PDB-C203.PDF ] |
Número de pieza | Descripción | Fabricantes |
PDB-C201 | Blue Enhanced Bi-Cell Silicon Photodiode | Advanced Photonix |
PDB-C203 | Blue Enhanced Quad-Cell Silicon Photodiode | Advanced Photonix |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |