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ON Semiconductor - General Purpose Transistors PNP Silicon

Numéro de référence BCX71JLT1G
Description General Purpose Transistors PNP Silicon
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BCX71JLT1G fiche technique
BCX71JLT1G
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General Purpose Transistor
PNP Silicon
Features
Moisture Sensitivity Level: 1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45
45
5.0
100
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD 350 mW
2.8 mW/°C
Storage Temperature
Thermal Resistance,
Junction-to-Ambient (Note 1)
Tstg
RqJA
150 °C
357 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
BJ M G
G
BJ = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BCX71JLT1G
SOT23
(Pbfree)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 3
1
Publication Order Number:
BCX71J/D

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