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RFUS20TM4S Datasheet دیتاشیت PDF دانلود

دیتاشیت - Rohm - Super Fast Recovery Diode

شماره قطعه RFUS20TM4S
شرح مفصل Super Fast Recovery Diode
تولید کننده Rohm 
آرم Rohm 


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RFUS20TM4S شرح
www.DataSheet4U.com
Super Fast Recovery Diode
RFUS20TM4S
Series
Ultra Fast Recovery
Dimensions (Unit : mm)
+0.3
0.1
+0.3
0.1
+0.2
0.1
Applications
General rectification
Structure
(1) (2) (3)
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
Construction
Silicon epitaxial planer
+0.1
0.05
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Conditions
Duty0.5
Direct voltage
Limits
430
430
Average rectified forward current
Io 60Hz half sin wave, Resistance load, Tc=68C
20
Forward current surge peak
Junction temperature
Storage temperature
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25 C
100
Tj 150
Tstg -55to+150
Unit
V
V
A
A
C
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal resistance
Rth(j-c)
Conditions
IF=20A
VR=430V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ.
- 1.4
- 0.05
- 24
--
Max.
1.6
10
35
2
Unit
V
μA
ns
C/W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A

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