|
|
Numéro de référence | RB530S-30 | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky barrier Diode
RB530S-30
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
Construction
Silicon epitaxial planer
www.DataSheet4U.com
Land size figure (Unit : mm)
0.8
EMD2
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (DC)
Average rectified forward current
VR
Io
Forward current surge peak (60Hz/1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
Electical characteristics (Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Limits
30
100
500
125
-40 to +125
Unit
V
mA
mA
C
C
Min. Typ. Max.
- - 0.45
- - 0.5
Unit Conditions
V IF=10mA
μA VR=10V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
|
|||
Pages | Pages 4 | ||
Télécharger | [ RB530S-30 ] |
No | Description détaillée | Fabricant |
RB530S-30 | Schottky Barrier Diode | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |