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RB530S-30 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB530S-30
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB530S-30 fiche technique
Schottky barrier Diode
RB530S-30
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
Construction
Silicon epitaxial planer
www.DataSheet4U.com
Land size figure (Unit : mm)
0.8
EMD2
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (DC)
Average rectified forward current
VR
Io
Forward current surge peak (60Hz/1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
Electical characteristics (Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Limits
30
100
500
125
-40 to +125
Unit
V
mA
mA
C
C
Min. Typ. Max.
- - 0.45
- - 0.5
Unit Conditions
V IF=10mA
μA VR=10V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A

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