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RB162VA-20 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB162VA-20
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB162VA-20 fiche technique
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Schottky barrier Diode
RB162VA-20
Applications
General rectification
Dimensions (Unit : mm)
0.17
+0.1
0.05
Land size figure (Unit : mm)
1.1
Feature
1)Small mold type (TUMD2)
2)Low VF
3)High reliability
Structure
Silicon epitaxial planer
0.6
+0.2
0.1
TUMD2
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak (60Hz/1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
Limits
25
20
1.0
5.0
125
-40 to +125
Unit
V
V
A
A
C
C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - 0.36 0.4
IR - 0.3 1.2
Unit Conditions
V IF=1.0A
mA VR=20V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A

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