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RB051M-2Y fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB051M-2Y
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB051M-2Y fiche technique
Schottky Barrier Diode
RB051M-2Y
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Small power mold type.PMDU
2)Ultra Low VF
3)High reliability
Construction
Silicon epitaxial planer
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
www.DataSheet4U.com
Land size figure(Unit : mm)
1.2
PMDU
Structure
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current(*1)
VRM
VR
Io
Forward current surge peak 60Hz1cyc
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Mounting on alumina board. Tc=95C Max.
Limits
20
20
3
30
125
-40 to +125
1.5MAX
Unit
V
V
A
A
C
C
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF - - 0.46
IR - - 0.9
Unit Conditions
V IF=3A
mA VR=20V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.01 - Rev.A

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