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EM6K7 fiches techniques PDF

ROHM Semiconductor - 1.2V Drive NchNch MOSFET

Numéro de référence EM6K7
Description 1.2V Drive NchNch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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EM6K7 fiche technique
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1.2V Drive Nch+Nch MOSFET
EM6K7
zStructure
Silicon N-channel
MOSFET
zApplications
Switching
zDimensions (Unit : mm)
EMT6
zFeatures
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
3) Low voltage drive (1.2V) makes this device ideal for
portable equipment.
zPackaging specifications
Type
Package
Code
Basic ordering unit
(pieces)
Taping
T2R
8000
EM6K7
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Each lead has same dimensions
Abbreviated symbol : K07
zInner circuit
(6)
(5) (4)
1
2
1
(1)
1 Esd Protection diode
2 Body Diode
(2)
2
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(3) (5)Tr2 Gate
(6)Tr1 Drain
Parameter
Drainsource voltage
Gatesource voltage
Drain current
Continuous
Pulsed
Total power dissipation
Symbol
VDSS
VGSS
ID
IDP 1
PD2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land.
Limits
20
±8
±200
±400
150
120
150
55 to +150
Unit
V
V
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
1042
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.07 - Rev.A

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