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Número de pieza | EMP215 | |
Descripción | 12.5 - 16.5 GHz Power Amplifier MMIC | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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UPDATED 05/08/2008
EMP215
12.5 – 16.5 GHz Power Amplifier MMIC
FEATURES
• 12.5 – 16.5 GHz Operating Frequency Range
• 24.0dBm Output Power at 1dB Compression
• 17.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 14dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=190mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F Operating Frequency Range
12.5 16.5
P1dB
Output Power at 1dB Gain Compression
22.5 24.0
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 14dBm
15.0 17.0
-40
-37
Input RL
Input Return Loss
-10 -6
Output RL Output Return Loss
-10 -6
Idss
VDD
Rth
Saturate Drain Current
Power Supply Voltage
VDS =3V, VGS =0V
Thermal Resistance (Au-Sn Eutectic Attach)
211 264 317
78
34
Tb Operating Base Plate Temperature
-35 +85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDS
VGS
IDD
IGSF
PIN
TCH
TSTG
PT
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
VALUE
8V
-4 V
Idss
4mA
@ 3dB compression
150°C
-65/150°C
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
oC/W
ºC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2008
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet EMP215.PDF ] |
Número de pieza | Descripción | Fabricantes |
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